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DS2045Y/AB Single-Piece 1Mb
Nonvolatile SRAM
Functional Diagram
CE
V CC
V TP REF
CURRENT-LIMITING
RESISTOR
DELAY TIMING
CIRCUITRY
CHARGER
UNINTERRUPTED
POWER SUPPLY
FOR THE SRAM
V CC
CE
RST
V SW REF
OE
WE
SRAM
DQ0 – 7
REDUNDANT LOGIC
ML
CURRENT-LIMITING
RESISTOR
REDUNDANT
SERIES FET
GND
OE
WE
A0 – A16
BATTERY-CHARGING/SHORTING
PROTECTION CIRCUITRY (UL RECOGNIZED)
DS2045
Detailed Description
The DS2045 is a 1Mb (128k x 8 bits) fully static, NV
memory similar in function and organization to the
DS1245 NV SRAM, but containing a rechargeable ML
battery. The DS2045 NV SRAM constantly monitors V CC
for an out-of-tolerance condition. When such a condition
occurs, the lithium energy source is automatically
switched on and write protection is unconditionally
enabled to prevent data corruption. There is no limit to
the number of write cycles that can be executed and no
additional support circuitry is required for microproces-
sor interfacing. This device can be used in place of
SRAM, EEPROM, or flash components.
The DS2045 assembly consists of a low-power SRAM,
an ML battery, and an NV controller with a battery
charger, integrated on a standard 256-ball, 27mm 2
BGA substrate. Unlike other surface-mount NV memory
modules that require the battery to be removable for
soldering, the internal ML battery can tolerate exposure
to convection reflow soldering temperatures allowing
this single-piece component to be handled with stan-
dard BGA assembly techniques.
Two versions of the DS2045 are available that provide
either a 5% (DS2045AB) or 10% (DS2045Y) power-
monitoring trip point. The DS2045 also contains a
power-supply monitor output, RST , which can be used
as a CPU supervisor for a microprocessor.
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